Thin film solar cell - Wikipedia, the free encyclopedia Thin-film solar cells are usually categorized according to the photovoltaic material ... A silicon thin-film cell uses amorphous (a-Si or a-Si:H), protocrystalline , ...
p-i-n solar cell p-i-n solar cell солнечный элемент с р - i - n-структурой Большой англо-русский и русско-английский словарь. 2001. p-i-n photodiode p-i-n structure ...
Impedance Spectroscopic Study of p-i-n Type a-Si Solar Cell by Doping Variation of p-Type Layer We investigated p-i-n type amorphous silicon (a-Si) solar cell where the diborane flow rate of the p-type layer was varied and the solar cell was measured static/dynamic characteristics. The p/i interface of the thin film amorphous silicon solar cells was
Light soaking effect in a-Si_H based n–i–p and p–i–n solar cells - 豆丁網 Hydrogenated amorphous silicon solar cells have been realised in both a p–i–n configuration on a Corning glass substrate as well as in a n–i–p configuration on stainlesssteel ...
Complete microcrystalline p‐i‐n solar cell—Crystalline or amorphous cell behavior? Voltage‐dependent spectral response measurements suggest that the carrier transport in complete μc‐Si:H p‐i‐n cells may possibly be cosupported by diffusion (in addition to drift). journal/journal.article aip/apl /content/aip/journal/apl/65/7/10 ...
Complete Microcrystalline p-i-n Solar Cell-Crystalline or Amorphous Cell Behavior Published in: Appl. Phys. Lett., vol. 65, p. 860-862 Publication date: 1994 Complete μc-Si:H p-i-n solar cells have been prepared by the very high frequency glow discharge method. Up to now, intrinsic μc-Si:H has never attracted much ...
High-rate microcrystalline silicon deposition for p–i–n junction solar cells Abstract We have developed a high-rate plasma process based on high-pressure and silane-depletion glow discharge for highly efficient microcrystalline silicon (μc-Si:H) p–i–n junction solar cells. Under high-rate conditions (2–3 nm/s), we find that the de
Light soaking effect in a-Si:H based n–i–p and p–i–n solar cells Hydrogenated amorphous silicon solar cells have been realised in both a p–i–n configuration on a Corning glass substrate as well as in a n–i–p configura ... A similar discussion can be made for the n–i–p solar cell deposited on stainless steel. Fig. 3 rep
Dilute nitride and GaAs n-i-p-i solar cells Device fabrication The GaAs and GaInNAs n-i-p-i solar cells were grown by molecular beam epitaxy. The GaAs n-i-p-i solar cell had three junctions (a one-junction device would correspond to a conventional solar cell). The active region of the device has th
碩博士論文 945201048 詳細資訊 - 中文查詢介面 P-I-N Solar Cell with Composition-Graded Amorphous Silicon-Alloy Layers 檔案 945201048.pdf 本電子論文使用權限為同意立即開放。已達開放權限電子全文僅授權使用者為學術研究之目的,進行個人非營利性質之檢索、閱讀、列印 ...