Metal–semiconductor junction - Wikipedia, the free encyclopedia In solid-state physics, a metal–semiconductor (M–S) junction is a type of junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can ...
Re: [請益] Fermi-level pinning - 看板 Electronics - 批踢踢實業坊 Fermi level pinning是一種推斷的物理現象 理論上它是介面電荷所造成的 由於介面電荷的關係,造成Fermi level上升或下降(這要看是n or p-type基板)
Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface ... IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 51, NO. 6, JUNE 2004. 971. Fermi-Level ...
Intel's High-K di-electric Technology Threshold Voltage Pinning- high-K and Polysilicon gate are incompatible due to Fermi level pinning at the High-K and Polysilicon interface which causes high ...
High-K dielectric Electron tunneling is a major concern at this level as it contributes to current leakage through the gate. Further ... Phonon scattering and Fermi level pinning.
Theory Fermi Level Pinning Dielectrics fundamental relaxation of Fermi-level pinning in high-k gate dielectric. Keywords-component; Fermi-level pinning; poly-Si gates; metal silicidegates; 0vacancy; 0interstitial; high-kdielectrics; interface dipoles; theory;flatbandvoltageshift I. INTRODUCTIO
IEEE Xplore Abstract - Theory of Fermi Level Pinning of High-k Dielectrics The widening of this work-function pinning-free-region is the key issue for the fundamental relaxation of Fermi-level pinning in high-k gate dielectric Published in: Simulation of Semiconductor Processes and Devices, 2006 International Conference on Date
Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi leve We have studied Fermi level pinning (FLP) of Hf-based high-k gate stacks based on thermodynamics based on an O vacancy model. Our study shows that FLP cannot be avoided when the system is under thermal equilibrium. O exposure to aim O vacancy ...
Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi leve Numerous metal oxides have been studied worldwide as possible high-k gate dielectric candidates for MOS devices on alternative semiconductor materials (Ge, III/ ... On HCl-cleaned GaAs, the Hf-content in the first HfCl 4 /H 2 O reaction cycle is not repro
IEEE Xplore Abstract - Stoichiometry dependence of Fermi-level pinning in fully silicided (FUSI) NiS Stoichiometry dependence of Fermi-level pinning in a fully silicided (FUSI) NiSi gate on high-K dielectric is investigated. A higher composition ratio of Si in NiSi shows a higher degree of Fermi-level pinning. It has also been found that there is a criti
