Fermi Level Pinning at the PolySi/Metal Oxide Interface C. Hobbs, L. Fonseca, V. Dhandapani, S. Sama Fermi Level Pinning at the PolySi/Metal Oxide Interface C. Hobbs, L. Fonseca, V. Dhandapani, S. Samavedam, B. Taylor, J. Grant, L. Dip, D. Triyoso, R. Hegde, D. Gilmer, R. Garcia, D. Roan, L. Lovejoy, R. Rai, L. Hebert, H. Tseng, B. White and P. Tobin APR
Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface ... that the Fermi level at the poly-Si interface is pinned above the middle of the poly- Si bandgap.
Theory of Fermi Level Pinning of High-k Dielectrics - IEEE Xplore Fermi-level pinning of poly-Si and metal-silicide gate materials on Hf-based gate dielectrics has been ...
Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface ... IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 51, NO. 6, JUNE 2004. 971. Fermi-Level ...
Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi leve We have studied Fermi level pinning (FLP) of Hf-based high-k gate stacks based on thermodynamics based on an O vacancy model. Our study shows that FLP cannot be avoided when the system is under thermal equilibrium. O exposure to aim O vacancy ...
Presentation Fermi level pinning and mobility degradation. 12. Conclusions. New Materials for the Gate Stack of MOS-Transistors. 2 ...
Slides High threshold voltage because of Fermi level pinning at poly-Si/High-K interface ; Degraded channel carrier mobility.
IEEE Xplore - Fermi level pinning at the polySi/metal oxide ... 由於此網站的設置，我們無法提供該頁面的具體描述。
IEEE Xplore Abstract - Fermi level pinning at the polySi/metal oxide interface We report here for the first time that Fermi pinning at the polySi/metal oxide interface causes high threshold voltages in MOSFET devices. Results indicate that pinning occurs due to the interfacial Si-Hf and Si-O-Al bonds for HfO/sub 2/ and Al/sub 2/O/su
Fermi-Level Pinning at the Poly-Si/HfO2 Interface Journal of the Korean Physical Society, Vol. 55, No. 6, December 2009, pp. 2501∼2504 Fermi-Level Pinning at the Poly-Si/HfO 2 Interface Ranju Jung∗ Department of Electrophysics, Kwangwoon University, Seoul 139-701 The high threshold voltage in metal-oxide
