Fermi-level depinning at metal/GaN interface by an insulating barrier Highlights • Fermi level pinning phenomenon is dominant at metal/GaN interface. • Proposed and demonstrated a methodology for Fermi level depinning • Barrier height engineering when used in conjunction with Gd • Fermi level depinning using insulating barr
Depinning of the Fermi level at the Ge Schottky interface through Se treatment Depinning of the Fermi level at Al/Ge junctions was achieved through Se treatment. Al contacts to n- and p-type Ge with Se treatment exhibited ohmic and Schottk ... Figure 1 shows the I–V characteristics of Al contacts to n- and p-type Ge with and without
Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath--《半導體 高級搜索：用" Schottky barrier Fermi level pinning " 到知網平台檢索，點擊這裡搜索更多... 《半導體學報》 2012年10期 加入收藏 投稿 Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical ...
Fermi-level depinning for low-barrier Schottky source/drain transistors - ResearchGate Publication » Fermi-level depinning for low-barrier Schottky source/drain transistors. ... [Show abstract] [Hide abstract] ABSTRACT: Metal contact to SiC is not easy to modulate since the contact can be influenced by the metal, the termination of the SiC,
IEEE Xplore Abstract - Fermi level depinning at metal-organic semiconductor interface for low-resist This paper presents the direct evidence and successful demonstration of Fermi-level depinning at metal-organic semiconductor (M/O) interfaces by inserting an ultrathin interfacial Si 3 N 4 insulator in between. The contact behavior is tuned from rectifyin
Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorp FIELD OF THE INVENTION The invention relates generally to semiconductor processing and semiconductor devices. More particularly, the invention relates to a process for depinning the Fermi level of a semiconductor at a metal-interface layer-semiconductor .
Fermi Level Depinning Failure for Al/GeO2/Ge Contacts Skip to main page content HOME CURRENT ISSUE FOCUS ISSUES ARCHIVE COLLECTIONS SUBSCRIBE HELP FEEDBACK Search for Keyword: GO Advanced Search User Name Password Sign In Fermi Level Depinning Failure for Al/GeO 2 /Ge Contacts
Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath - Abs Fermi level depinning by a C-containing layer in a metal/Ge structure by using a chemical bath Wang Wei (王巍), Wang Jing (王敬), Zhao Mei (赵梅), Liang Renrong (梁仁荣) and Xu Jun (许军) Show affiliations Tag this article Full text PDF (2.38 MB) ...
Fermi level depinning at the germanium Schottky interface through sulfur passivation We demonstrate the depinning of Fermi level on both p- and n-type germanium after sulfur passivation by aqueous ( NH 4 ) 2 S treatment. Schottky contacts realized using metals with a wide range of work functions produce nearly ideal behavior confirming th
Fermi-level depinning for low-barrier Schottky source/drain transistors Fermi-level depinning for low-barrier Schottky source/drain transistors Rent: Rent this article for USD Buy: USD28.00 10.1063/1.2159096 Daniel Connelly 1,a), Carl Faulkner 1, P. A. Clifton 1 and D. E. Grupp 1 Scitation Author Page PubMed Google Scholar 1
